Foxconn H55M-S English Manual. - Page 36
► DRAM tWTR Internal Write to Read Command Delay
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3 ► DRAM tRP (Precharge Command Period) This item allows you to select the row precharge time (in clock cycles). ► DRAM tRCD (RAS-to-CAS Delay) This item allows you to select a delay time (in clock cycles) between the CAS# and RAS# strobe signals. ► DRAM tWR (Write Recovery) This item allows you to select the write recovery time (in clock cycles). ► DRAM tRFC(Auto-Refresh-to-Active/Auto-Refresh Command Period) Refresh to Refresh or Refresh to Active command interval. ► DRAM tWTR (Internal Write to Read Command Delay) This item allows you to select a delay time (in clock cycles) between sending the last data from a write operation to the memory and issuing a read command. ► DRAM tRRD (Active-to-Active of a Different Bank) This item allows you to select a delay time (in clock cycles) between the RAS# and RAS# strobe signals. ► DRAM tRTP (Internal Read to Precharge Command Delay) This item allows you to set the delay time (in clock cycles) between read command and precharge command. ► DRAM tFAW(Four Active Window Delay) Specifies the time window in which four activates are allowed the same rank. ► Adjust DRAM Voltage This item is used to change the memory voltage. 29
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